SUR1040CT thru sur1060ct SUR1040CT v rsm v 400 v rrm v 400 symbol test conditions maximum ratings unit i frms i favm i frm t vj =t vjm t c =115 o c; rectangular, d=0.5 t p <10us; rep. rating, pulse width limited by t vjm 10 5 100 a t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 90 100 75 85 a i fsm t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 50 50 36 37 a 2 s i 2 t t vj t vjm t stg -40...+150 150 -40...+150 o c p tot t c =25 o c m d mounting torque 50 0.4...0.6 2 w nm weight g a=anode, c=cathode, tab=cathode a a c(tab) a c a dim. a b c d e f g h j k m n q r milimeter min. max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 bsc 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 inches min. max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 bsc 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 dimensions to-220ab soft recovery behaviour ultra fast recovery epitaxial diodes sur1060ct 600 600 c p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
advantages * high reliability circuit operation * low voltage peaks for reduced protection circuits * low noise switching * low losses * operating at lower temperature or space saving by reduced cooling applications * antiparallel diode for high frequency switching devices * antisaturation diode * snubber diode * free wheeling diode in converters and motor control circuits * rectifiers in switch mode power supplies (smps) * inductive heating and melting * uninterruptible power supplies (ups) * ultrasonic cleaners and welders features * international standard package jedec to-220ab * glass passivated chips * very short recovery time * extremely low switching losses * low i rm -values * rohs compliance symbol test conditions characteristic values typ. max. unit t vj =25 o c; v r =v rrm t vj =25 o c; v r =0.8 . v rrm t vj =125 o c; v r =0.8 . v rrm 20 10 1.5 ua ua ma i r i f =8a; t vj =150 o c t vj =25 o c 1.6 1.9 v v f r thjc r thck r thja 2.5 60 k/w 0.5 v r =540v; i f =15a; -di f /dt=100a/us; l<0.05uh; t vj =100 o c t rr i f =1a; -di/dt=50a/us; v r =30v; t vj =25 o c ns i rm 2.8 a 35 v to for power-loss calculations only 0.98 v r t 28.7 m t vj =t vjm 50 2.5 _ soft recovery behaviour ultra fast recovery epitaxial diodes * soft recovery behaviour 04 thru sur1060ct p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
f ig. 1 f orward current f ig. 2 r ecovery charge vers us -di f /dt. f ig. 3 p eak revers e current vers us vers us voltage drop. -di f /dt. f ig. 4 dynamic parameters vers us f ig. 5 r ecovery time vers us -di f /dt. f ig. 6 p eak forward voltage junction temperature. vers us di f /dt. f ig. 7 t rans ient thermal impedance junction to cas e. soft recovery behaviour ultra fast recovery epitaxial diodes sur104 0ct thru sur1060ct p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
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